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STL19N60M2 - N-Channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code STL19N60M2 VDS 600 V.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 0.308 Ω ID 11 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL19N60M2 Datasheet N-channel 600 V, 0.278 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package 5 432 1 PowerFLAT™ 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code STL19N60M2 VDS 600 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on) max. 0.308 Ω ID 11 A Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.