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STL19N60DM2
N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - preliminary data
Features
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Figure 1. Internal schematic diagram
D(3)
Order code VDS @ TJmax RDS(on)max
STL19N60DM2 650 V
0.320 Ω
ID 11 A
• Fast-recovery body diode • Extremely low gate charge and input
capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
Applications
• Switching applications
G(1) S(2)
AM01476v6
Description
This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.