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STL190N4F7AG
Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STL190N4F7AG
VDS 40 V
RDS(on) max 2.00 mΩ
ID 120 A
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STL190N4F7AG Datasheet
