STI6N80K5 Datasheet, STMicroelectronics

Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2.

* Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 t.

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring s.

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