STI11NM60ND datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB)
* Fast-recovery body diode
* Low gate ch.

Application

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* Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body di.

Description

- O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching perform.

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