STI10NM60N mosfet equivalent, n-channel power mosfet.
TAB
)1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$%
- Obsole* roduct(s)6
$0Y
Order code STI10NM60N
VDS
RDS(on)
@TJmax max.
650.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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