STI45N10F7 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V
* Ultra low on-resistance
* 100% avalanche tested ID 45 A PT.

Application

* Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary S.

Description

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 .

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