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STI410N4F7AG - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTOT 365 W.
  • Designed for automotive.

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STI410N4F7AG Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package Datasheet - preliminary data Features TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTOT 365 W  Designed for automotive applications  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.