STI410N4F7AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTO.

Application

* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI imm.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsole.

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