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STI400N4F6, STP400N4F6
Features
N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
Datasheet − preliminary data
Order codes
STI400N4F6 STP400N4F6
VDSS 40 V
RDS(on) max
ID
< 1.7 mΩ 120 A(1)
1. Limited by package
■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1.
STI400N4F6 Datasheet
