STI47N60DM6AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STI47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generat.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecover.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) pe.

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