STI175N4F6AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resist.

Application

and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STI175N4F6AG Table 1: Device summary Marking 175.

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