STI14NM65N mosfet equivalent, n-channel power mosfet.
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Type
VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V
RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω
ID
3
STI14NM65N STB14NM65N STF14NM65N S.
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Po.
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. I.
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