STH410N4F7-2AG mosfet equivalent, n-channel power mosfet.
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VDS
STH410N4F7-2AG 40 V
STH410N4F7-6AG
RDS(on) max.
1.1 mΩ
ID 200 A
PTOT 365 W
* Designed for automotive applications and AEC-Q101 qualified
* A.
and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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