STH400N4F6-6 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A
* Designed for automotive applications and AEC-.

Application

and AEC-Q101 qualified
* Low gate charge
* Very low on-resistance
* High avalanche ruggedness Figure 1. Int.

Description

G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lo.

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