STH315N10F7-2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure .

Application

* Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced t.

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Produ.

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