STH30N65DM6-7AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STH30N65DM6-7AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Lower RDS(on) per area vs previous gene.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per.

Image gallery