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STH310N10F7-6 - N-CHANNEL Power MOSFET

Download the STH310N10F7-6 datasheet PDF. This datasheet also covers the STH310N10F7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH310N10F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH310N10F7-2 N-CHANNEL Power MOSFET
STH315N10F7-2 Automotive-grade N-channel 100V 180A Power MOSFET
STH315N10F7-6 Automotive-grade N-channel 100V 180A Power MOSFET
STH300NH02L-6 Automotive-grade N-channel Power MOSFET
STH30N65DM6-7AG Automotive-grade N-channel Power MOSFET

Full PDF Text Transcription

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STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order codes STH310N10F7-2 STH310N10F7-6 Table 1.
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