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Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET
Datasheet — production data
Order codes STH320N4F6-2 STH320N4F6-6
VDS RDS(on) max
40 V
1.3 mΩ
1. Current limited by package.
■ Standard threshold drive ■ 100% avalanche tested
ID(1) 200 A
Applications
■ Automotive switching applications
TAB
TAB
2 3
1
H2PAK-2
1
H2PAK-6
7
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
Table 1.
STH320N4F6-2 Datasheet
