STH310N10F7-2 mosfet equivalent, n-channel power mosfet.
TAB
2 3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order codes
VDS RDS(on) max. ID
STH310N10F7-2 100 V
STH310N10F7-6
2.3 mΩ
180 A
* Ult.
* Switching applications
Description
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These devices utilize the 7 generation of design rules of ST’s proprietary .
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These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Order codes STH310N10F7-2 STH310N10F7-6
Table 1. .
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