STH175N4F6-6AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 .

Application

and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.

Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Order codes STH175N4F6-2AG STH175N4F6-6AG Table 1. Device .

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