STH170N8F7-2 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Cr.

Application

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6.

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