G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* VCE(sat) = 1.85 V (typ.) @ IC .

* Automotive converters
* Totem-pole power factor correction NG1E3C2T Description This device is an IGBT develop.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very.

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