STGWA30H65FB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* High-speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V(typ) @ IC = 30 A
* Safe paralle.
* Photovoltaic inverters
* High-frequency converters
Description
This device is an IGBT developed using an advan.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.
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