* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.8 V (typ.) @ IC = 40 A
* Tight parameters distribution
* Safe par.

* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers Description These devices are.

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency o.

STGFW40V60DF

STGFW40V60F

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