STGFW30V60DF datasheet, igbt equivalent, STMicroelectronics

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Features and benefits

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 30 A
* Tight parameter distribution
* Safe par.

Application

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very.

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