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STGFW20V60DF Datasheet, STMicroelectronics

STGFW20V60DF igbt equivalent, trench gate field-stop igbt.

STGFW20V60DF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 703.74KB)

STGFW20V60DF Datasheet
STGFW20V60DF
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 703.74KB)

STGFW20V60DF Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
* Tail-less switching off
* VCE(sat) = 1.8 V (typ.) @ IC = 20 A
* Tight.

Application


* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver.

Image gallery

STGFW20V60DF Page 1 STGFW20V60DF Page 2 STGFW20V60DF Page 3

TAGS

STGFW20V60DF
Trench
gate
field-stop
IGBT
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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