STGB18N40LZ igbt equivalent, eas 180 mj - 400 v - internally clamped igbt.
* AEC Q101 compliant
* 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH
* ESD gate-emitter protection
* Gate-collector high voltage clamping
* Logic.
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low .
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