* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 10 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resista.

* Motor control
* UPS
* PFC Description This device is an IGBT developed using an advanced proprietary trenc.

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where l.

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