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STGB10NB40LZT4 - 410V internally clamped IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH™ with an overall outstanding performance.

Key Features

  • Order code STGB10NB40LZT4 VCES Clamped VCE(sat)max. 1.8 V IC 20 A.
  • AEC-Q101 qualified.
  • Low threshold voltage.
  • Low on-voltage drop.
  • Low gate charge.
  • High current capability.
  • High voltage clamping feature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB10NB40LZT4 Automotive-grade 10 A, 410 V internally clamped IGBT Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C (2,TAB) G (1) RGE Features Order code STGB10NB40LZT4 VCES Clamped VCE(sat)max. 1.8 V IC 20 A  AEC-Q101 qualified  Low threshold voltage  Low on-voltage drop  Low gate charge  High current capability  High voltage clamping feature Applications  Switching applications Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH™ with an overall outstanding performance. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies the ESD protection.