STGB14NC60KD datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Short circuit withstand time 10µs.
* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)
* Switching losses incl.

Application

* High frequency inverters
* SMPS and PFC in both hard switch and resonant topologies
* Motor drivers Descri.

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. TAB 2 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device s.

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