STF11N65M2 mosfet equivalent, n-channel power mosfet.
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VDS
RDS(on) max.
STF11N65M2
650 V
0.68 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* 100% avalanche tested <.
* Switching applications
NG1D2S3Z
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 t.
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the.
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