STF11N60M2-EP datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

23 1 TO-220FP D(2) Order code VDS RDS(on) max. STF11N60M2-EP 600 V 0.595 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
*.

Application

* Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanc.

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching .

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