Order code VDS RDS(on) max. ID STF11N65M2(045Y) 650 V 0.68 Ω 7A
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* 100% aval.

* Switching applications NG1D2S3Z Description This device is an N-channel Power MOSFET developed using MDmesh M2 t.

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the.

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