TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD5NM60T4 600 V 1.0 Ω 5A
* 100% avalanche tested
* Low input capacitance and gate charge
* L.

* Switching applications G(1) Description S(3) This N-channel Power MOSFET is developed using STMicroelectronics'.

S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with AM01475v1_noZen the company's PowerMESH horizontal layout. This device offers extremely low .

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