STD5NM60-1 Datasheet, STMicroelectronics

TAB Order code VDS RDS(on) max. ID STD5NM60-1 600 V 1.0 Ω 5A 3 2 1
* 100% avalanche tested
* Low input capacitance and gate charge IPAK
* Low g.

* Switching applications G(1) S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using ST.

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresis.

STD5NM60

STD5NM60T4

STD5NM50

STD5NM50-1

STD5NM50AG

STD5NM50T4

STD5N20

STD5N20L

STD5N52K3

STD5N52U

STD5N60DM2

STD5N60M2

STD5N62K3