STD13NM50N datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes VDS RDS(on) max. STD13NM50N 500 V 0.320 Ω
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Applic.

Application

* Switching applications ID 12 A G(1) S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET .

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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