TAB 23 1 DPAK Figure 1. Internal schematic diagram , TAB Order code STD13N65M2 VDS 650 V RDS(on) max ID 0.43 Ω 10 A
* Extremely low gate charge
* Excell.

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.

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