STD13N50DM2AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input cap.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters a.

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