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STB60N03L-10 Datasheet ST Microelectronics

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uous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 30 30 ± 20 60 42 240 150 1 -65 to 175 175 Unit V V V A A A W W/ o C o o C C (
•) Pulse width lim.

STB60N03L-10 STB60N03L-10 STB60N03L-10
TAGS
N-CHANNEL
Power
MOSFET
STB60N03L-10
STB60N06-14
STB60N55F3

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