STB28NM60ND mosfet equivalent, n-channel mosfet.
Order codes
VDS @ TJ max.
RDS(on) max
ID
STB28NM60ND
STF28NM60ND 650 V
STP28NM60ND
0.150 Ω
23 A
STW28NM60ND
* Intrinsic fast-recovery body diode
* 100% .
* Switching applications
Description
These FDmesh™ II Power MOSFETs with
6
intrinsic fast-recovery body diode.
These FDmesh™ II Power MOSFETs with
6
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
$0Y
technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature
extremel.
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