Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N
*
*
* VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tes.

Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technol.

These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is there.

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STB200NF03-1

STB200NF04

STB200NF04-1

STB200NF04L

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