STB28N65M2 mosfet equivalent, n-channel power mosfet.
Order codes
STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2
VDS RDS(on) max
650 V
0.18 Ω
ID 20 A
* Extremely low gate charge
* Excellent output capacitance (Cos.
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technolog.
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for .
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