STB23NM60N mosfet equivalent, n-channel power mosfet.
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Type
VDSS (@Tjmax)
RDS(on) max
ID
1
3
3 12
STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1. Limited only by maximum temperature allowe.
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .
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