STB23NM50N datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order codes STB23NM50N STF23NM50N STP23NM50N STW23NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.19 Ω ID 17 A
* 100% avalanche tested
* Low input capacitance and.

Application

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET a.

Description

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref.

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