| Description | Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automoti... |
| Features |
Type STB200N4F3 STP200N4F3
■ ■ VDSS 40V 40V RDS(on) Max <0.0040Ω <0.0044Ω ID 120A 120A Pw 300W 300W 3 1 1 2 3 100% avalanche tested Standard threshold drive D²PAK TO-220 Applications ■ Switching applications – Automotive Description Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” st... |
| Datasheet |
 STB200N4F3 Datasheet - 386.15KB |
