STB12N60DM2AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STB12N60DM2AG VDS @ TJ max. 650 V RDS(on ) max. 430 mΩ ID 10 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and .

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters a.

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