STAP85050 Datasheet (STMicroelectronics)

Part STAP85050
Description RF power transistor
Category Transistor
Manufacturer STMicroelectronics
Size 280.01 KB
STMicroelectronics

STAP85050 Overview

Key Specifications

Max Operating Temp: 165 °C

Description

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications.

Price & Availability

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