STAP85025S mosfets equivalent, n-channel enhancement-mode lateral mosfets.
* Excellent thermal stability
* Common source configuration
* POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
* Plastic package
* ESD protection
It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linea.
The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 .
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