STAP57045
STAP57045 is RF power transistor manufactured by STMicroelectronics.
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RF power transistor, Ldmo ST plastic family N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
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Excellent thermal stability mon source configuration POUT = 45 W with 13 d B gain @ 945 MHz / 28 V ST advanced Power SO-10RF-STAP package
Description
The STAP57045 is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optimized for RF needs and offers excellent performances and ease of assembly. Mounting remendations are available in .st./rf/ (look for application note AN1294) GATE SOURCE
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STAP1
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Figure 1.
Pin connection
DRAIN
Table 1.
Device summary
Order code STAP57045 Package STAP1 Packing Tube
March 2009
Rev 1
1/17
.st. 17
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
Contents
1 .. Electrical data
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