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STAP57045 - RF power transistor

General Description

The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10RF-STAP package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STAP57045 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10RF-STAP package Description The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package.