STAP85025S Datasheet - STMicroelectronics

STAP85025S, N-channel enhancement-mode lateral MOSFETs

STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1.
Pin con

Features

* Excellent thermal stability
* Common source configuration
* POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
* Plastic package
* ESD protection
* In compliance with the 2002/95/EC European directive Table 1. Device summary Order code Marking Pack

Applications

* It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution fo

STAP85025S-STMicroelectronics.pdf